Samsung begins mass production on 512 GB flash storage

Posted December 06, 2017

Therefore, it doubles the density of Samsung's previous 48-layer V-NAND-based 256GB eUFS, and Samsung notes that it does so in the same amount of space as the 256GB package. Using UFS proved to be the right decision for Samsung, as it achieved much better performance than eMMC, which was predominantly used by Android phones at the time.

So do not be surprised if flagship phones next year - maybe even the Galaxy S9 and the Galaxy Note 9 - would top out at 512GB internal storage. Some might find the lack of a removal storage option restrictive, but the eUFS standard has the benefit of being a lot faster, offering sequential read and write speeds of 860 MB/s and 255 MB/s, respectively.

Samsung announced on December 5 that it had officially begun mass production on a 512GB embedded Universal Flash Storage chip - a first for the mobile industry. Samsung claims that the new eUFS solution will enable a flagship smartphone to store approximately 130 4K Ultra HD (3840x2160) video clips of a 10-minute duration which is about a tenfold increase over a 64GB eUFS which allows storing about 13 of the same-sized video clips.

In the end, this new storage solution helps Samsung to keep its comfortable lead in the flash memory market, but this does not mean we are going to see flagships with 512 GB of internal storage space anytime soon.

Samsung says that the 64-layer 512Gb V-NAND's advanced circuit design and new power management technology in the 512GB eUFS' controller can minimize the increase in energy it consumes. It also boasts a random read speed of 42,000 IOPS (input/output operations per second) and a write speed of 40,000 IOPS. That translates to being able to transfer a 5GB Full HD video clip to an SSD in about six seconds, which is about eight times faster than a typical microSD card. However, if the company starts using this storage module, we may be facing the prospects of losing the microSD card slot. Samsung's 512GB eUFS is composed of eight stacks of 64-layer 512 gigabit (Gb) V-NAND and a controller, doubling the memory of the 256GB eUFS while maintaining the same size, according to ZDNet.